Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TSM4N80
Standard Package	1000
Manufacturer	Taiwan Semiconductor Corporation
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	955pF @ 25V
FET Feature	-
Power Dissipation (Max)	38.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

IRLR3110ZTRPBF	Infineon Technologies, N-Channel 100V 42A (Tc) 140W (Tc) Surface Mount D-Pak, HEXFET®	View
IRLZ14STRLPBF	Vishay Siliconix, N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK,	View
DMN65D8LFB-7	Diodes Incorporated, N-Channel 60V 260mA (Ta) 430mW (Ta) Surface Mount X1-DFN1006-3,	View
STB160N75F3	STMicroelectronics, N-Channel 75V 120A (Tc) 330W (Tc) Surface Mount D2PAK, STripFET™	View
STP28NM60ND	STMicroelectronics, N-Channel 600V 23A (Tc) 190W (Tc) Through Hole TO-220, FDmesh™ II	View
IRFPG40PBF	Vishay Siliconix, N-Channel 1000V 4.3A (Tc) 150W (Tc) Through Hole TO-247-3,	View
TSM3N80CI C0G	Taiwan Semiconductor Corporation, N-Channel 800V 3A (Tc) 94W (Tc) Through Hole ITO-220AB,	View
NTMFS4982NFT1G	ON Semiconductor, N-Channel 30V 26.5A (Ta), 207A (Tc) 1.5W (Ta) Surface Mount 5-DFN (5x6) (8-SOFL),	View
DMN21D2UFB-7B	Diodes Incorporated, N-Channel 20V 760mA (Ta) 380mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),	View
IXTA20N65X	IXYS, N-Channel 650V 20A (Tc) 320W (Tc) Surface Mount TO-263 (IXTA),	View
IXTA36N30P	IXYS, N-Channel 300V 36A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA), PolarHT™	View
IRL1004PBF	Infineon Technologies, N-Channel 40V 130A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View

TSM4N80CZ C0G

Part NumberTSM4N80CZ C0G